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RT1A040ZP Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch MOSFET | |||
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1.5V Drive Pch MOSFET
RT1A040ZP
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
zDimensions (Unit : mm)
TSST8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : YE
Each lead has same dimensions
zPackaging specifications
Package
Type
Code
Basic ordering unit(piecies)
RT1A040ZP
Taping
TR
3000
zEquivalent circuit
(8)
(7)
(6)
(5)
â2
â1
(1)
(2)
(3)
(4)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP â1
IS
ISP â1
PD
Tch
Range of Storage temerature
Tstg
â1 Pw 10µs, Duty cycle 1%
â2 When mounted on a ceramic board
Limits
â12
±10
±4
±16
â1
â16
1.25
150
â55 to +150
zThermal resistance
Parameter
Channel to ambient
â When mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
Unit
V
V
A
A
A
A
W â2
°C
°C
Unit
°C / W
www.rohm.com
âc 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.A
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