RSY160P05 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch MOSFET

Transistors
4V Drive Pch MOSFET
RSY160P05
RSY160P05
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSY160P05
Taping
TL
2500
zDimensions (Unit : mm)
TCPT
(2)
(1)
(3)
zEquivalent circuit
∗1
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Tc=25°C
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−45
±20
±16
±32
−16
−32
20
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Tc=25°C
Symbol
Rth (ch-c) ^∗
Limits
6.25
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Gate
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
1/5