RSX501LA-20_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RSX501LA-20
zApplications
General rectification
zFeatures
1) Small and Thin power mold
type (PMDT)
2) High reliability.
3) Low IR
zDimensions (Unit : mm)
zStructure
Silicon epitaxial planar
ROHM : PMDï¼´
zLand size figure (Unit : mm)
2.0
PMDï¼´
zStructure
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.1
　　　　　 0
0.25±0.05
2.7±0.1
4.0±0.1
φ1.55±0.1
　　　　　 0
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
25
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current (*1)
Io
5.0
A
Forward current surge peak （60Hz・1cyc） I_FSM
70
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Alumina substrate at the time of assemble, Tc=90℃ max.
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.39
I_R
-
-
500
Unit
Conditions
V
I_F=3.0A
µA
V_R=20V
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2009.10 - Rev.A