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| RSX501L-20_15 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RSX501L-20
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low VF and low IR
lConstruction
Silicon epitaxial planar type
12
0.1±0.02
PMDS
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1
2 : Manufacture date
lStructure
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Ïf11..55±0.05
Cathode
Anode
0.3
2.9±0.1
lAbsolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
4.0±0.1
Conditions
Ïf11.5.555
2.8MAX
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Dutyâ¦0.5
25
V
Reverse Voltage
VR
Direct Reverse Voltage
20
V
Average Forward Rectified Current
Io
Alumina board mounted, 60Hz half sin Wave,
resistive load, Tc=90ºCmax.
5
A
Non-repetitive Forward Current Surge Peak IFSM
60Hz half sin wave, one cycle,
non-repetitive at Ta=25°C
70
A
Operating Junction Temperature
Tj
-
125
°C
Storage Temperature
Tstg
-
-40 to +125 °C
lElectrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage
Reverse Current
VF
IF=3.0A
-
- 0.39 V
IR
VR=20V
-
- 500 mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.12 - Rev.B
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