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RSX501L-20_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode | |||
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Data Sheet
Schottky barrier Diode
RSX501L-20
ï¬Applications
General rectification
ï¬Features
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
3) High reliability.
ï¬Construction
Silicon epitaxial planar
ï¬Dimensions (Unit : mm)
2.6±0.2
ï¬Land size figure (Unit : mm)
2.0
57
â â¡
1.5±0.2
0.1±0.02
ããã 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
â â¡ Manufacture Date
PMDS
ï¬Structure
ï¬Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
Ï1.55±0.05
0.3
2.9±0.1
4.0±0.1
Ï1.55
2.8MAX
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
25
V
Reverse voltage (DC)
VR
20
V
Average rectified forward current
Io
5
A
Forward current surge peak (60Hzã»1cyc)(*1) IFSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
ï40 to ï«125
°C
(*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave
ï¬Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
-
0.39
Reverse current
IR
-
-
500
Unit
Conditions
V
IF=3.0A
μA
VR=20V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.D
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