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| RSX501L-20_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
Schottky barrier diode
RSX501L-20
RSX501L-20
zApplications
General rectification
zFeatures
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
3) High reliability.
z Dimensions (Unit : mm)
ãªãª
ãªã«§ãªãª
ãª
z Land size figure (Unit : mm)
ãªãª
ãª
ãª5
ãª7
㽲㽳
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãªãª
äääã©·ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãª
㪧㪤ãªãªª
zStructure
zConstruction
Silicon epitaxial planar
㪩㪦ãªãª¤ã©·ãªã©·ãª§ãª¤ãªãªª
㪡ãªãªãªãªã©·ãªã©·ãªªãª¦ãªãªãªãªãª
ã½² ã½³ 㪤㪸ã«
ã«ãª½ãª¸ãªºã«ã«ã«ãª¼ã©·ãªãª¸ã«ãª¼
z Taping specifications (Unit : mm)
ãªãª
ãªã«§ãªãª
ãªãª
ãªãª
ãªã«§ãªãª
ãª
ã±¢ãªãª
ãªãªã«§ãªãª
ãªãª
ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãª
ã±¢ãªãª
ãªãª
ãªãª
ãªãª¤ãªãª¯
zAbsolute maximum ratings (Ta=25qC)
Param eter
Sym bol
Lim its
Unit
Revers e voltage (repetitive peak)
VRM
25
V
Revers e voltage (DC)
VR
20
V
Average rectified forward current
Io
5
A
Forward current s urge peak ä¨60Hzä¶1cycä© IFSM
70
A
Junction tem perature
Tj
125
ã·
Storage tem perature
Ts tg
-40 to +125
ã·
(*1)Tc=90ͨm ax Mouinted on epoxy board. 180° Half s ine wave
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Forward voltage
VF
-
Reverse current
IR
-
Typ. Max.
-
0.39
-
500
Unit
Conditions
V
IF=3.0A
μA
VR=20V
Rev.D
1/3
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