RSX501L-20TE25 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Data Sheet
Schottky barrier Diode
RSX501L-20
Applications
General rectification
Features
1) Small power mold type. (PMDS)
2) Low V_F, Low I_R.
3) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
57
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
25
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current
Io
5
A
Forward current surge peak (60Hz・1cyc)(*1) I_FSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
-
0.39
Reverse current
I_R
-
-
500
Unit
Conditions
V
I_F=3.0A
μA
V_R=20V
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2011.05 - Rev.D