RSX101VA-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Data Sheet
Schottky barrier Diode
RSX101VA-30
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
Features
1) Small mold type. (TUMD2)
2) Low V_F
3) High reliability.
Construction
Silicon epitaxial planar
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
Land size figure (Unit : mm)
1.1
TUMD2
Structure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
5
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
0.9±0.08
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
0.43 0.47
I_R1
-
15
40
I_R2
-
40 200
Unit
Conditions
V
I_F=1A
μA
V_R=5V
μA
V_R=30V
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2011.05 - Rev.B