RSX101VA-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RSX101VA-30
RSX101VA-30
zApplications
General rectification
zFeatures
1) Small mold type. (TUMD2)
2) Low V_F
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
z Land size figure (Unit : mm)
1.1
TUMD2
zStructure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
0.9±0.08
zAbsolute maximum ratings (Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
Forward current s urge peak _（60Hz_・1cyc_）
Junction tem perature
Storage tem perature
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol Min. Typ.
Forward voltage
V_F
-
0.43
Revers e current
I_R1
-
15
I_R2
-
40
Lim its
Unit
30
V
30
V
1
A
5
A
150
℃
-40 to +150
℃
Max.
0.47
40
200
Unit
V
I_F =1 A
µA
V_R=5V
µA
V_R=30V
C o n d iti o n s
Rev.B
1/3