RSX101VA-30 Datasheet, PDF (1/3 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RSX101VA-30
RSX101VA-30
zApplication
General rectification.
zFeatures
1) Small power mold type. (TUMD2 (1913) )
2) High reliability.
3) Low VF / Low IR. (0.43V at 1A / 40µA at 30V)
zStructure
Silicon Epitaxial Planer
zExternal dimensions (Unit : mm)
0.8±0.05 ^{CATHODE MARK}
0.17±^00..105
ROHM :
EIAJ : −
JEDEC :
1.3±0.1
0.6±^00..21
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
30
V
Reverse voltage (DC)
VR
30
V
Average rectified forward current
IO
1
A
Forward current surge peak (60Hz / 1cyc.)
IFSM
5
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−40 to 150
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Forward voltage
VF
−
Reverse current
IR1
−
IR2
−
Capacitance between terminals
CT
−
Typ.
0.43
15
40
30
Max.
0.47
40
200
−
Unit
Conditions
V
IF=1.0A
µA
VR=5V
µA
VR=30V
pF
VR=10V, f=1MHz
Rev.A
1/2