RSX101M-30_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RSX101M-30
Applications
General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
Land size figure (Unit : mm)
1.2
Features
1)Small power mold type. (PMDU)
2)Low V_F, Low I_R
3)High reliability
Construction
Silicon epitaxial
PMDU
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hz・1cyc)
I_FSM
45
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
(*1)Mounting on epoxi board. 180°Half sine wave
1.5MAX
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminals
V_F
-
0.35 0.39
I_R
-
90 200
Ct
-
60.0
-
ESD breakdown voltage
ESD
-
12.0
-
Unit
Conditions
V
I_F=1A
μA
V_R=30V
pF
V_R=10V , f=1MHz
kV
C=200pF ,R=0Ω
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2011.05 - Rev.C