RSX101M-30_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RSX101M-30
RSX101M-30
zApplications
General rectification
z Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
　　　 0.05
zFeatures
1) Small power mold type. (PMDU)
2) Low V_F, Low I_R.
3) High reliability.
zConstruction
Silicon epitaxial planar
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
z Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
z Land size figure (Unit : mm)
1.2
PMDU
zStructure
0.25±0.05
1.81±0.1
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
Forward current s aurge peak (60Hz_・1cyc_）
Junction tem perature
Storage tem perature
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
(*1)Mounted on epoxy board. 180°Half s ine wave
φ1.0±0.1
1.5MAX
Lim its
Unit
30
V
30
V
1
A
45
A
150
℃
-40 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals
Ct
-
0.35 0.39
-
90 200
-
60.0
-
ESD breakdown voltage
ESD
-
12.0
-
Unit
Conditions
V
I_F=1A
µA
V_R=30V
pF
V_R=10V , f=1MHz
kV
C=200pF ,R=0Ω
Rev.C
1/3