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RSX101M-30TR Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode | |||
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Data Sheet
Schottky Barrier Diode
RSX101M-30
ï¬Applications
General rectification
ï¬Dimensions (Unit : mm)
1.6±0.1
0.1±0.1
ããã 0.05
ï¬Land size figure (Unit : mm)
1.2
ï¬Features
1)Small power mold type. (PMDU)
2)Low VF, Low IR
3)High reliability
ï¬Construction
Silicon epitaxial
PMDU
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
ï¬Structure
ï¬Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
Ï1.55±0.05
0.25±0.05
1.81±0.1
4.0±0.1
Ï1.0±0.1
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
30
V
Reverse voltage (DC)
VR
30
V
Average rectified forward current
Io
1
A
Forward current surge peak (60Hzã»1cyc)
IFSM
45
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
ï40 to ï«150
°C
(*1)Mounting on epoxi board. 180°Half sine wave
1.5MAX
ï¬Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminals
VF
-
0.35 0.39
IR
-
90 200
Ct
-
60.0
-
ESD breakdown voltage
ESD
-
12.0
-
Unit
Conditions
V
IF=1A
μA
VR=30V
pF
VR=10V , f=1MHz
kV
C=200pF ,R=0â¦
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1/3
2011.05 - Rev.C
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