RSX1001T3_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RSX1001T3
Applications
Switching power supply
Dimensions (Unit : mm)
Features
1) Cathode common type.
(TO-220)
2) Low I_R
3) High reliability
Construction
Silicon epitaxial planer
Data Sheet
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
V_RM
30
V_R
30
Io
10
Forward current surge peak (60Hz / 1cyc) (*1)
I_FSM
150
Junction temperature
Tj
150
Storage temperature
Tstg
40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C
Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
V_F
-
-
0.45
I_R
-
-
500
jc
-
-
2.5
Unit
V
V
A
A
C
C
Unit
V
A
C/W
Conditions
I_F=5A
V_R=30V
junction to case
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2011.05 - Rev.B