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RSX1001T3_10 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Schottky barrier diode
RSX1001T3
ï¬Applications
Switching power supply
ï¬Dimensions (Unit : mm)
ï¬Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
ï¬Construction
Silicon epitaxial planer
ï¬Structure
(1) (2) (3)
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
30
VR
30
Io
10
Forward current surge peak (60Hz / 1cyc) (*1)
IFSM
150
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132ï°C
ï¬Electrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
VF
-
- 0.45
IR
-
-
500
ï±jc
-
-
2.5
Unit
V
V
A
A
ï°C
ï°C
Unit
V
ïA
ï°C/W
Conditions
IF=5A
VR=30
junction to case
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1/3
2010.02 - Rev.B
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