RSX1001T3 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RSX1001T3
RSX1001T3
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
zStructure
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ï¼´O220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current (*1)
Io
10
A
Forward current surge peak （60Hz・1cyc）
I_FSM
150
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40 to +150
℃
(*1) Business frequencies, Rating of R-load, 1/2 lo per diode, TC=100℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol Min. Typ. Max.
V_F
-
- 0.45
I_R
-
-
500
θjc
-
-
2.5
Unit
V
µA
℃/W
Conditions
I_F=5A
V_R=30V
junction to case
1/3