RSX051VYM30FH Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RSX051VYM30FH
Application
General rectification
Dimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17±0.04
0.6±0.1
Datasheet
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
1.1
(1)
Features
1) Small mold type (TUMD2M)
2) High reliability
3) Low V_F and low I_R
0～0.1
(2)
ROHM : TUMD2M
Manufacture date and factory
TUMD2M
Structure ^(1)Cathode
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ1.5^+-00.1
(2) Anode
0.25±0.05
1.53±0.03
Φ1.0^+-00.2
0.9±0.08
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
V_RM
Duty≦0.5
30
V
Reverse Voltage
V_R
Direct Reverse Voltage
30
V
Average Forward Rectified Current
I_o
Glass epoxi mounted, 60Hz half sin Wave,
resistive load, T_c=130ºC Max.
0.5
A
Non-repetitive Forward Current Surge Peak I_FSM
60Hz half sin wave,
Non-repetitive at T_a=25°C, 1cycle
5
A
Operating Junction Temperature
T_j
-
150
°C
Storage Temperature
T_stg
-
40 to 150 °C
Electrical Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage
Reverse Current
V_F
I_F=0.5A
- 0.35 0.39 V
I_R
V_R=30V
- 40 200 A
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2015.04 - Rev.B