RSX051VA-30_1 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RSX051VA-30
zApplication
General rectification.
zFeatures
1) Small mold type. (TUMD2)
2) Low VF
3) High reliability.
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
RSX051VA-30
zLead size figure (Unit : mm)
1.1
TUMD2
zStructure
0.25±0.05
1.43±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
4.0±0.1
φ1.0±0.2
　　　　　0
Limits
Unit
30
V
30
V
500
mA
5
A
150
℃
-40 to +150
℃
0.9±0.08
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Typ.
0.35
40
Max.
0.39
200
Unit
Conditions
V I_F=500mA
µA V_R=30V
Rev.C
1/3