RSU002P03 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET

Transistors
4V Drive Pch MOSFET
RSU002P03
RSU002P03
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance
2) 4V drive
zApplications
Switching
zDimensions (Unit : mm)
UMT3
2.0
0.3
(3)
0.9
0.2 0.7
(1) Source
(2) Gate
(3) Drain
(2)
(1)
0.65 0.65
1.3
0.15
Each lead has same dimensions
Abbreviated symbol : WP
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSU002P03
Taping
T106
3000
zInner circuit
(3)
(2)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ^∗1
PD ^∗2
Tch
Tstg
Limits
−30
±20
±0.25
±0.5
0.2
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ^∗
Limits
625
Unit
V
V
A
A
W
°C
°C
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
Rev.A
1/4