RSS110N03 Datasheet, PDF (1/4 Pages) Rohm – Switching (30V, +11A, -11A)

Transistor
Switching (30V, ±11A)
RSS110N03
RSS110N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplications
Power switching, DC/DC converter.
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
0.2±0.1
0.4±0.1
1.27
0.1
Each lead has same dimensions
zStructure
•Silicon N-channel MOS FET
zEquivalent circuit
(8)
(7)
(6)
(5) (8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipatino
Channel temperature
Strage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±11
±44
1.6
6.4
2
150
−55 to +150
Unit
V
V
A
A
∗1
A
A
∗1
W
∗2
°C
°C
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