RSS095N05 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOS FET

Transistor
4V Drive Nch MOS FET
RSS095N05
RSS095N05
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
zApplications
Power switching , DC / DC converter , Inverter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8)
(5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging dimensions
Package
Co de
Basic ordering unit(pieces)
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
V_DSS
45
V
Gate-source voltage
V_GSS
20
V
Drain current
Continuous I_D
±9.5
A
Pulsed
I_{DP *1}
±38
A
Source current
Continuous I_S
1.6
A
(Body diode)
Pulsed
I_{SP *1}
38
A
Total power dissipation
P_{D *2}
2
W
Chanel temperature
T_ch
150
o_C
Range of Storage temperature
T_stg -55 to +150
o_C
*1 PW≤10µｓ、Duty cycle≤1%
*2 Mounted on a ceramic board
zThermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R_{th(ch-a) *}
Limits
62.5
Unit
o_C/W
zEquivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD Protection Diode.
∗2 Body Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
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