RSS090N03 Datasheet, PDF (1/4 Pages) Rohm – Switching (30V, 9A)

Transistors
Switching (30V, 9A)
RSS090N03
RSS090N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication
Power switching, DC/DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0±0.2
0.2±0.1
0.4±0.1
1.27
0.1
Each lead has same dimensions
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Source Current
(Body Diode)
Continuous
Pulsed
Total Power Dissipation
Channel Temperature
Storage Temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP
Is
Isp
PD
Tch
Tstg
Limits
30
20
±9.0
±36
1.6
6.4
2
150
−55 to +150
Unit
V
V
A
A ^∗1
A
A ^∗1
W ^∗2
°C
°C
zEquivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD Protection Diode.
∗2 Body Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zThermal resistance (Ta = 25°C)
Parameter
Symbol
Channel to Ambient
∗ Mounted on a ceramic board.
Rth (ch-a)
Limits
62.5
Unit
°C / W ^∗
1/3