RSS085N05 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOSFET

Transistor
4V Drive Nch MOS FET
RSS085N05
RSS085N05
Structure
Silicon N-channel
MOS FET
Features
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
Applications
Power switching , DC / DC converter, Inverter
External dimensions (Unit : mm)
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Absolute maximum ratings (Ta=25 C)
Parameter
Symbol Limits
Unit
Drain-source voltage
V_DSS
45
V
Gate-source voltage
V_GSS
20
V
Drain current
Continuous ID
±8.5
A
Pulsed
I_{DP *1}
±34
A
Source current
Continuous IS
1.6
A
(Body diode)
Pulsed
I_{SP *1}
34
A
Total power dissipation
P_{D *2}
2
W
Chanel temperature
T_ch
150
o_C
Range of Storage temperature
T_stg -55 to +150
o_C
*1 PW 10 Duty cycle 1
*2 Mounted on a ceramic board
Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R_{th(ch-a) *}
Limits
62.5
Unit
o_C/W
Equivalent circuit
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