RSR030N06 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSR030N06
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Small Surface Mount Package (TSMT3).
zApplication
Switching
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
Abbreviated symbol : PY
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSR030N06
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
60
±20
±3
±12
0.8
12
1.0
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
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2009.04 - Rev.A