RSR025P03FRA Datasheet, PDF (1/8 Pages) Rohm – 4V Drive Pch MOSFET

Transistors
4V Drive Pch MOSFET
RSR02255PP0033FRA
RSRR0S2R50P2053PF0R3A
AEC-Q101 Qualified
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRSSRR002255PP0033FRA
Taping
TL
3000
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : WY
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−30
±20
±2.5
±10
−0.8
−10
1
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
Rev.A
1/4