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| RSR025N05 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Data Sheet
4V Drive Nch MOSFET
RSR025N05
ï¬Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
ï¬Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT3
(3)
(1)
(2)
ï¬Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSR025N05
Taping
TL
3000
ï¡
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
45
V
VGSS
±20
V
ID
ï±2.5
A
IDP *1
ï±10
A
IS
0.8
A
ISP *1
10
A
PD *2
1.0
W
Tch
150
ï°C
Tstg ï55ï toï ï«150 ï°C
*1 Pwâ¤10ïs, Duty cycleâ¤1%
*2 Mounted on a ceramic board
ï¬ Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
â1
â2
(1)
(2)
â1 BODY DIODE
â2 ESD PROTECTION DIODE
ï¬Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board
Symbol
Rth (ch-a)*
Limits
125
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.09 - Rev.A
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