RSR025N03TL Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch MOS FET

Transistors
4V Drive Nch MOS FET
RSR025N03
RSR025N03
zStructure
Silicon N-channel
MOS FET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
zApplication
Power switching, DC / DC converter.
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : QY
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSR025N03
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤100µs, Duty cycle≤2%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
30
20
±2.5
±10
0.8
3.2
1
150
−55 to 150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗2 Mounted on a ceramic board.
Symbol
Rth (ch-a)^∗
Limits
125
Unit
°C / W
zEquivalent circuit
(3)
(3)
(1)
∗1
∗2
(1)
(2)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Rev.C
1/3