RSR025N03 Datasheet, PDF (1/4 Pages) Rohm – Switching (30V, 2.5A)

Transistors
Switching (30V, 2.5A)
RSR025N03
RSR025N03
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3) .
zApplication
Power switching, DC / DC converter.
zStructure
Silicon N-channel
MOS FET
zExternal dimensions (Unit : mm)
TSMT3
2.9±0.1
0.4^{+−00..105}
(3)
1.0MAX.
0.85±0.1
0.7±0.1
(1) Gate
(2) Source
(3) Drain
0~0.1
(1)
0.95 0.95
1.9±0.2
(2)
0.16
+0.1
−0.06
Each lead has same dimensions
Abbreviated symbol : QY
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
RSR025N03
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
30
20
±2.5
±10
0.8
3.2
1
150
−55 to 150
Unit
V
V
A
A
∗
A
A
∗
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-A)
Limits
125
Unit
°C / W
zEquivalent circuit
(3)
(3)
(1)
∗1
∗2
(1)
(2)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Rev.A
1/3