RSR020N06 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch MOS FET

4V Drive Nch MOS FET
RSR020N06
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSR020N06
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Range of channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
60
±20
±2
±8
0.8
8
1.0
150
−55 to +150
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : PZ
zInner circuit
(3)
(3)
(1)
∗2
(1)
(2)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗2 When mounted on a ceramic board.
Symbol
Rth (ch-a)^∗
Limits
125
Unit
°C / W
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2009.06 - Rev.A