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RSQ045N03_07 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Transistors
4V Drive Nch MOSFET
RSQ045N03
RSQ045N03
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (4V drive).
zDimensions (Unit : mm)
TSMT6
zApplications
Switching
Each lead has same dimensions
Abbreviated symbol : QL
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSQ045N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
Limits
30
20
±4.5
±18
1.0
18
1.25
150
â55 to +150
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
Rev.A
1/3
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