RSQ045N03 Datasheet, PDF (1/3 Pages) Rohm – 4V Drive Nch MOS FET

Transistors
4V Drive Nch MOS FET
RSQ045N03
RSQ045N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) Low voltage drive (4V drive).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : QL
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSQ045N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
30
20
±4.5
±18
1.0
18
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
1/2