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RSQ035P03TR Datasheet, PDF (1/3 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Transistors
4V Drive Nch MOS FET
RSQ035N03
RSQ035N03
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
zApplications
Switching
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0~0.1
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : QN
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSQ035N03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
â2
â1
(1)
(2)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
Limits
30
20
±3.5
±14
1.0
14
1.25
150
â55 to +150
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
100
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
1/2
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