RSQ025P03FRA Datasheet, PDF (1/8 Pages) Rohm – 4V Drive Pch MOS FET

Transistor
4V Drive Pch MOS FET
RSQ0255PP0033FRA
RSQR0S2Q50P2053PF0R3A
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.(120mΩ at 4.5V)
2) High Power Package.(PD=1.25W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
DC-DC converter
zExternal dimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Each lead has same dimensions
Abbreviated symbol : TP
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RRSSQQ002255PP0033FRA
Taping
TR
3000
zEquivalent circuit
(6)
(5)
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain−source voltage
VDSS
−30
V
Gate−source voltage
VGSS
±20
V
Continuous
ID
±2.5
A
Drain current
Pulsed
IDP ^∗1
±10
A
Source current
Continuous
IS
−1
A
(Body diode)
Pulsed
ISP
∗1
−4
A
Total power dissipation
PD ^∗2
1.25
W
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Tch
150
°C
Tstg
−55 to +150
°C
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
°C / W
(4)
∗1
(1)DRAIN
(2)DRAIN
(3)
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN
Rev.A
1/4