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| RSQ015P10 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Pch MOSFET | |||
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Data Sheet
4V Drive Pch MOSFET
RSQ015P10
ï¬ Structure
Silicon P-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Low voltage drive(4V).
3) Small surface mount package (TSMT6).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT6
Abbreviated symbol : ZN
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSQ015P10
Taping
TR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
ï100
V
VGSS
ï±20
V
ID
ï±1.5
A
IDP *1
ï±6.0
A
IS
ï1.0
A
ISP *1
ï6.0
A
PD *2
1.25
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(6)
(5)
(4)
â2
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
â1
(1)
(2)
(3)
ïª1 ESD PROTECTION DIODE
ïª2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
100
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
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