RSQ015N06 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSQ015N06
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Small Surface Mount Package (TSMT6).
zApplication
Switching
zDimensions (Unit : mm)
TSMT6
2.9
1.9
0.95 0.95
(6) (5) (4)
1.0MAX
0.85
0.7
1pin mark
(1) (2) (3)
0.4
0~0.1
0.16
Abbreviated symbol : PX
zInner circuit
(6)
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSQ015N06
Taping
TR
3000
∗2
(1)
(2)
∗1 ESD Protection Diode
∗2 Body Diode
∗1
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
60
±20
±1.5
±6
1
6
1.25
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
100
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
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2009.06 - Rev.A