RSM002N06 Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
RSM002N06
 Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(VMT3).
3) Low voltage drive(2.5V drive).
 Application
Switching
 Dimensions (Unit : mm)
VMT3
Abbreviated symbol : RK
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSM002N06
Taping
T2L
8000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
60
V
V_GSS
20
V
I_D
250
mA
I_DP ^*1
1
A
I_S
125
mA
I_SP ^*1
1
A
P_D ^*2
150
mW
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
 Inner circuit
(3)
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) GATE
(2) SOURCE
(3) DRAIN
 Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)^*
Limits
833
Unit
C / W
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2010.04 - Rev.A