RSL020P03 Datasheet, PDF (1/3 Pages) Rohm – 4V Drive Pch MOS FET

Transistors
4V Drive Pch MOS FET
RSL020P03
RSL020P03
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zExternal dimensions (Unit : mm)
TUMT6
2.0
1.3
0.65 0.65
(6) (5) (4)
0.85Max.
0.77
0~0.1
(1) (2) (3)
0.3
0.17
Abbreviated symbol : SL
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSL020P03
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗2
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
Unit
−30
V
±20
V
±2
A
±8
A
−0.8
A
−8
A
1
W
150
°C
−55 to +150
°C
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
Unit
°C/W
1/2