RSJ650N10FRA Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSJ650N10 FRA
z Structure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) 4V drive.
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
z Application
Switching
z Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSJ650N10 FRA
Taping
TL
1000
{
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
100
V
V_GSS
r20
V
I_D *3
r65
A
I_DP ^*1
r130
A
I_S *3
65
A
I_SP ^*1
130
A
P_D ^*2
100
W
Tch
150
qC
Tstg 55 to 150 qC
*1 P_Wd10Ps, Duty cycled1%
*2 T_C=25°C
*3 Please use within the range of SOA.
z Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ᰛ1 ESD PROTECTION DIODE
ᰛ2 BODY DIODE
z Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol Limits
Rth (ch-c)^* 1.25
Unit
qC / W
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20116.06 - Rev.A