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| RSJ650N10 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Data Sheet
4V Drive Nch MOSFET
RSJ650N10
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High power package.
3) 4V drive.
ï¬ Dimensions (Unit : mm)
LPTS
10.1
4.5 1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ650N10
Taping
TL
1000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
100
V
VGSS
ï±20
V
ID *3
ï±65
A
IDP *1
ï±130
A
IS *3
65
A
ISP *1
130
A
PD *2
100
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 PWï£10ïs, Duty cycleï£1%
*2 TC=25°C
*3 Please use within the range of SOA.
ï¬ Inner circuit
â1
â2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
1.25
Unit
ï°C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
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