RSJ450N04 Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
RSJ450N04
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High current
3) High power Package
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSJ450N04
Taping
TL
1000
○
Data Sheet
 Dimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
 Inner circuit
∗1
∗2
Absolute maximum ratings (T_a = 25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
V_DSS
40
V
Gate-source voltage
V_GSS
20
V
Drain current
Continuous
I_D
45
A
Pulsed
I_DP ^*1
90
A
Source current
Continuous
I_S
40
A
(Body Diode)
Pulsed
I_SP ^*1
90
A
Power dissipation
P_D ^*2
50
W
Channel temperature
Tch
150
C
Range of storage temperature
Tstg 55to150 C
*1 Pw10s, Duty cycle1%
*2 T_c=25C
(1) Gate
(2) Drain
(3) Source
 Thermal resistance
Parameter
Channel to Case
* T_c=25C
Symbol
R_{th (ch-c)} ^*
Limits
2.5
Unit
C / W
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
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1/5
2011.09 - Rev.A