RSJ250P10FRA Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Pch MOSFET

4V Drive Pch MOSFET
RSJ250P10FRA
z Structure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
z Application
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1
4.5
1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
z Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ250P10 FRA
Taping
TL
1000
ۑ
z Inner circuit
∗1
∗2
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
V_DSS
100
V
V_GSS
r20
V
I_D *1
r25
A
I_DP ^*2
r50
A
I_S *1
25
A
I_SP ^*2
50
A
P_D ^*3
50
W
Tch
150
qC
Range of storage temperature
Tstg 55 to 150 qC
*1 Limited only by maximum temperature allowed.
*2 P_Wᱨ10Ps, Duty cycleᱨ1%
*3 T_C=25°C
z Thermal resistance
Parameter
Channel to Ambient
* T_C=25°C
Symbol
Limits
Rth (ch-c)^* 2.5
Unit
qC / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ᰛ1 ESD PROTECTION DIODE
ᰛ2 BODY DIODE
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