RSJ10HN06 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSJ10HN06
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) High power Package
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSJ10HN06
Taping
TL
1000

Data Sheet
 Dimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
 Inner circuit
∗1
∗2
Absolute maximum ratings (T_a = 25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
60
V
V_GSS
20
V
I_D *3
100
A
I_DP ^*1
200
A
I_S ^*3
100
A
I_SP ^*1
200
A
P_D ^*2
100
W
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 T_C=25C
*3 Limited only by maximum channel temperature allowed.
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol
Rth (ch-c)^*
Limits
1.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.09 - Rev.A