RSH090N03 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSH090N03
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH090N03
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
20
V
Continuous
ID
±9.0
A
Drain Current
Pulsed
IDP ^∗1
±36
A
Source Current ^Continuous
Is
1.6
A
(Body Diode)
Pulsed
Isp ^∗1
18
A
Total Power Dissipation
PD ^∗2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Tstg
−55 to +150
°C
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-a)^∗
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD Protection Diode.
∗2 Body Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
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2009.12 - Rev.A