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RSH070P05TB1 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Pch MOSFET | |||
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4V Drive Pch MOSFET
RSH070P05
ï¬Structure
Silicon P-channel MOSFET
ï¬Features
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
ï¬Application
Power switching, DC / DC converter, Inverter
ï¬Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH070P05
Taping
TB
2500
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
VDSS
-45
V
Gate-source voltage
VGSS
±20
V
Drain current
Continuous ID
±7.0
A
Pulsed
IDP *1
±28
A
Source current
Continuous IS
-1.6
A
(Body diode)
Pulsed
ISP *1
-28
A
Total power dissipation
PD *2
2
W
Chanel temperature
Tch
150
oC
Range of Storage temperature
Tstg -55 to +150
oC
*1 PWï£10ïï½ãDuty cycleï£1ï¥
*2 Mounted on a ceramic board
ï¬Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
Rth(ch-a) *
Limits
62.5
Unit
oC/W
ï¬Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
ï¬Inner circuit
(8)
(7)
(6)
(5)
â2
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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