RSH070N05 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSH070N05
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter, Inverter
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH070N05
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
V_DSS
45
V
Gate-source voltage
V_GSS
20
V
Drain current
Continuous I_D
±7.0
A
Pulsed
I_DP
*1
±28
A
Source current
Continuous I_S
1.6
A
(Body diode)
Pulsed
I_SP
*1
28
A
Total power dissipation
P_D
*2
2
W
Chanel temperature
T_ch
150
o_C
Range of Storage temperature
T_stg -55 to +150
o_C
*1 PW10ｓ, Duty cycle1
*2 Mounted on a ceramic board
Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R_th(ch-a) *
Limits
62.5
Unit
o_C/W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD Protection Diode.
∗2 Body Diode.
(1) (2) (3) (4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
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2009.12 - Rev.A