RSH065N06 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSH065N06
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSH065N06
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
20
V
Continuous
ID
±6.5
A
Drain current
Pulsed
IDP ^∗1
±26
A
Source current
Continuous
IS
1.6
A
(Body diode)
Pulsed
ISP ^∗1
26
A
Total power dissipatino
PD ^∗2
2.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-A) ^∗
Limits
62.5
Unit
°C / W
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Inner circuit
(8)
(7)
(6)
(5) (8) (7) (6) (5)
∗2
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
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2009.12 - Rev.A