English
Language : 

RSF015N06 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET
Data Sheet
4V Drive Nch MOSFET
RSF015N06
 Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (TUMT3).
3) Low voltage drive. (4V)
 Application
Switching
 Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : PX
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSF015N06
Taping
TL
3000
○
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
V
VGSS *1
20
V
ID *1
1.5
A
IDP *1
6.0
A
IS
0.6
A
ISP *1
6.0
A
PD *2
0.8
W
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗1
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A