RSE002N06 Datasheet, PDF(1/6 Page) Rohm – 2.5V Drive Nch MOSFET

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RSE002N06 Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET

RSE002N06

ï¬ Structure

Silicon N-channel MOSFET

ï¬Features

1) High speed switing.

2) Small package(EMT3).

3) Low voltage drive(2.5V drive).

ï¬ Application

Switching

ï¬ Dimensions (Unit : mm)

EMT3

1.6

0.3

(3)

0.7

0.55

(1)Source

(2)Gate

(3)Drain

(2) (1)

0.2

0.2

0.15

0.5 0.5

1.0

Abbreviated symbol : RK

ï¬ Packaging specifications

Package

Type Code

Basic ordering unit (pieces)

RSE002N06

Taping

TL

3000

ï¡

ï¬ Absolute maximum ratings (Ta = 25ï°C)

Parameter

Symbol

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Source current

(Body Diode)

Continuous

Pulsed

Power dissipation

Channel temperature

Range of storage temperature

VDSS

60

V

VGSS

ï±20

V

ID

ï±250

mA

IDP *1

ï±1

A

IS

125

mA

ISP *1

1

A

PD *2

150

mW

Tch

150

ï°C

Tstg ï55 to +150 ï°C

*1 Pwï£10ïs, Duty cycleï£1%

*2 Each terminal mounted on a recommended land.

ï¬ Inner circuit

(3)

â2

(2)

(1) Source

(2) Gate

(3) Drain

â1

(1)

â1 ESD PROTECTION DIODE

â2 BODY DIODE

ï¬ Thermal resistance

Parameter

Channel to ambient

* Each terminal mounted on a recommended land.

Symbol

Rth (ch-a)*

Limits

833

Unit

ï°C / W

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âc 2010 ROHM Co., Ltd. All rights reserved.

2010.01 - Rev.A

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