RSD200N10 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Nch MOSFET

Transistors
4V Drive Nch MOSFET
RSD200N10
RSD200N10
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be r30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
zDimensions (Unit : mm)
CPT3
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
RSD200N10
Taping
TL
2500
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
100
Gate-source voltage
VGSS
±20
Drain current
Continuous
ID ^∗3
±20
Pulsed
IDP ^∗1
±80
Source current
(Body Diode)
Continuous
IS
20
Pulsed
ISP ^∗1
80
Avalanche Current
IAS ^∗2
20
Avalanche Energy
EAS ^∗2
85
Total power dissipation (Tc=25°C)
PD
20
Channel temperature
Tch
150
Range of storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 265μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
−55 to +150
! ! ! ! zInner circuit
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
∗2
∗1 BODY DIODE
∗1 ^{∗2 ESD PROTECTION}
DIODE
(1)GATE
(2)DRAIN
(3)SOURCE
(1)
(2)
(3)
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
Unit
°C/W
Rev.A
1/5