RSD200N05FRA Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RSD200N05FRA
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
zApplication
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
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÷õü
÷õþü
÷õýü
÷õĀ ùõú
ïøð
ïùð
ïúð ùõú
÷õü
øõ÷
zPackaging specifications
Package
Type _Code
Basic ordering unit (pieces)
RSD200N05FRA
Taping
TL
2500
{
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
45
V
V_GSS
r20
V
I_D
r20
A
I_DP ^*1
r40
A
I_S
16
A
I_SP ^*1
40
A
P_D ^*2
20
W
T_ch
150
qC
T_stg 55 to 150 qC
*1 Pwᱨ10Ps, Duty cycleᱨ1%
*2 T_c=25qC
z Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
zThermal resistance
Parameter
Channel to Case
* T_c=25qC
Symbol
R_{th (ch-c)}^*
Limits
6.25
Unit
qC / W
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20116.068 - Rev.A